Stacked memory up to 512GB sounds revolutionary, but NEO’s bold claims face skepticism amid stagnant DRAM prices and limited ...

NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 ...

NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory ...

SK hynix is continuing to boost its lead in the new cutting-edge field of what's being referred to as "dream memory" or 3D DRAM, with the South Korean giant recently hitting 56% yields on the new ...

Sandisk has positioned 3D Matrix Memory as an affordable solution in response to the end of Moore’s Law for DRAM, where scaling stagnation, a widening compute-memory gap, and soaring memory ...

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

A typical DRAM memory cell consists of a transistor (T) and a storage capacitor (C); these are also referred to as 1T1C cells. A bit of 3D is already available with "planar" DRAM, where the memory ...

While flash memory has made significant strides in capacity through monolithic 3D processing, DRAM has faced challenges in achieving a similar 3D architecture. The primary obstacle has been the ...

6F DRAM builds the cells horizontally, 4F introduces vertical concepts to DRAM memory cell design, and 3D DRAM stacks memory cells vertically on a single die or stacks memory dies. Between DRAM ...