Microsemi Corp. has reached an agreement with Advanced Power Technology Inc. (APT) for the sale of its low frequency RF bipolar transistor business for $12.2 million in cash, the companies said today.

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series. These ultra-low ...

CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

A transistor fabricated from the crystalline phase of an organic semiconductor material could provide a path to improved switching speeds — rivalling those of devices built from inorganic materials ...