A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...
Using CMOS Gates to create crystal oscillators is cost-effective and gives the designer more control over the parameters. To view the application note, click on the URL below. Circuit selected for www ...
The IXRFD630 is a CMOS high speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall ...
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D and E, HF and RF applications at up to 30 MHz, as well as other applications. The ...
Any typical digital design style with CMOS uses complementary pairs of p-type and n-type MOSFETs for logic functions implementation. Naturally, CMOS always ought to provide INVERTED outputs like ...
Density and speed of IC’s have increased exponentially for several decades, following a trend described by Moore’s Law. While it is accepted that this exponential improvement trend will end, it is ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results