By segmenting the buried word-line gate into regions with distinct work functions, the electric field along the channel is precisely controlled ... Simulate the full process flow of a DRAM cell array, ...

Neo Semiconductor reveals a unique performance boosting mechanism called Back-gate Channel-depth ... that the current 2D DRAM is experiencing”. NEO Semiconductor’s 3D X-DRAM™ is a first-of-its-kind 3D ...