Semiconductor Engineering5d
Solution To Read Disturbance For Current And Future DRAM Chips at Low Area, Performance And Energy Costs (ETH Zurich et al.)
Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance” was published by researchers at ETH ...
EDN23d
DRAM basics and its quest for thermal stability by optimizing peripheral transistors
For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...
Digi Times28d
CXMT advances to 16nm DRAM production, pushes 15nm development
each with a 66.99mm² die size, 0.239Gb/mm² bit density, and an estimated 16nm circuit linewidth. CXMT's G4 DDR5 reduces DRAM cell size by 20% compared to G3 (18nm). For context, Samsung and SK ...