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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C.
tom's Hardware on MSN3mon
Leading DRAM makers may stop producing DDR4 and DDR3 by late 2025 — China memory makers flood the market with half-price memory
Leading DRAM makers — Micron, Samsung, and SK hynix — may cease production of DDR3 and DDR4 memory by the end of the year.
Design-Reuse2y
NEO Semiconductor Launches Ground-Breaking 3D X-DRAM Technology, A Game Changer in the Memory Industry
The world’s first 3D NAND-like DRAM is targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market; makes manufacturing and scaling memory with higher densities and capacities ...
Computerwoche Online1mon
Researchers working on memory to replace DRAM, NAND
A Taiwanese research group has turned to (Resistive-RAM) as the latest possible Holy Grail of memory chips, one that can replace both DRAM and NAND flash memory. DRAM has been the main memory type ...
CRN9y
HPE Intros 'Persistent Memory,' Combining DRAM Speed With NAND Flash Persistence
Hewlett Packard Enterprise on Tuesday officially rolled out a new type of server memory it said combines the performance of DRAM with the persistence of traditional SSDs or spinning disk.