Micron claims to have reduced DRAM’s power consumption by 20% in its sixth-generation 10-nm DDR5 memory devices.

The new DRAM offers up to 9200MT/s speeds, a 15% performance boost, and over 20% power savings. Using high-K metal gate technology and EUV lithography, it improves efficiency, bit density, and ...

It requires optimization of specific modules, including the transistors’ gate stack, source/drain junctions, and source/drain metal contacts. Editor’s Note: This is first part of the article series ...

Transistor-level innovations such as the high-K/metal-gate stacks and the fully depleted ... management and cell instability. Dynamic RAM (DRAM) has also played a significant role in computing ...

Micron delivers superior performance and power efficiency to data center, client and mobile platforms with the industry’s first high performance 1γ nodeBOISE, Idaho, Feb. 25, 2025 (GLOBE NEWSWIRE) -- ...