Duraton: 4 hours. In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, ...

This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

Schematic Diagram of a P-N Junction Diode: The diagram illustrates the basic structure of a p-n junction diode with p-type silicon on one side, n-type silicon on the other, and the anode and cathode ...

Illuminating a gate-defined PN junction, ... Band diagrams corresponding to the different device configurations. (d) ... This demonstrates that the b-P PN junction can be used for energy harvesting.

Duration: 5 hours. In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination ...

To date, there is a lack of research on using low-energy ion implantation to achieve patterned p-type doping on 2D materials to completely reverse their conductivity types and construct lateral p ...