NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

NEO Semiconductor unveils a breakthrough 1T1C-type 3D X-DRAM cell—delivering up to 512 Gb density, 10ns fast read/write speed, and over 450 seconds of data retention—optimized for high ...

CXMT Corp., China's top domestic DRAM manufacturer, has initiated its IPO process, signaling a key step in the nation's ...

NEO Semiconductor’s push into 3D X-DRAM memory marks an ambitious attempt to rethink DRAM design for the AI and high-performance computing era. While the promises - stacked layers, ...

Samsung's thrust into 1c DRAM development is because it has fallen behind massively in the HBM semiconductor market against fellow South Korean memory rival SK hynix, and US-based Micron. 1c DRAM ...

Infinitesima says that SK hynix, a full stack artificial intelligence (AI) memory provider, has adopted the Metron®3D 300mm ...

Prices of benchmark 8-gigabit DDR4 modules have doubled over the past month following a Taiwanese media report that leading Chinese maker ChangXin Memory Technologies (CXMT) is preparing to phase out ...

For those written in the last week, our most read stories on the site cover Alliance Memory products, Soitec collaborating with Powerchip, the UKESF launching the Semiconductor STEP programme, ...

Shares of Micron Technology ( MU 3.74%) rallied today, up as much as 4.6% before ending the day up 3.7%.

Micron Technology has announced plans to invest approximately $200 billion in semiconductor manufacturing and research and development efforts in the U.S. as part of a push to improve domestic ...