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This article presents the development results of laboratory installation of the induction melting in cold crucible with a bottom conical shape to solve the problem of accumulation of noble metals ...
The n-channel SiC Insulated Gate Bipolar Transistor (IGBT) devices have emerged as a prominent contender in the domain of contemporary high-efficiency power electronic systems, predominantly due to ...
One day, undoubtedly, all will become clear but, for now, Pilsdon Pen keeps its mysteries to itself.
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