Abstract: This letter investigates the coupling conduction mechanism between the MOS-channel and the body diode of planar-gate SiC mosfets (planar mosfets), as well as its influence on third-quadrant ...
Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure
Abstract: In standard CMOS technologies, only N-well or polysilicon resistors are available. The main drawback of these resistors is that their value is not perfectly controlled due to process ...
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