A new review paper in Engineering delves into silicon carbide (SiC)-based pressure sensors. SiC, a third-generation semiconductor, shows great ...

has excellent properties such as a wide bandgap, high carrier saturation drift rate, and strong chemical stability. These make it an ideal material for high-temperature pressure sensors.

NASA's James Webb Space Telescope (JWST) utilizes mid-infrared spectroscopy to precisely analyze molecular components such as ...

The agileTSENSE_A is a GP temperature sensor, a traditional ΔVBE temperature sensor that amplifies the difference between two VBE voltages, and converts the result to a single-ended signal. ... The ...

Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family. The new ...

HCLTech offers IP Bandgap (BGR) bgr_1p2_t40_v1 generates precision reference voltage (0.4V ~ 1.2V) and current reference (1.005µA ~ 8.07µA) with variation of 103 ppm/°C over a temperature range of ...

The review, titled “Pressure Sensors Based on the Third-generation Semiconductor Silicon ... wide bandgap, high carrier saturation drift velocity, and excellent chemical stability. These ...