Researchers have demonstrated that by using a semiconductor with flexible bonds, the material can be molded into various structures using nano containers, without altering its composition. The ...

Abstract: This paper proposes a topology of amplifier-less temperature sensor based on BJT. Two base-emitter voltages are connected to the input and the reference voltage of the ADC. The signal ratio ...

At the device and circuit level, these wide bandgap diodes and transistors can potentially have smaller carbon footprints than their silicon cousins, due to their smaller die size and superior ...

Traditionally, silicon-based power devices such as Insulated Gate Bipolar Transistors (IGBTs) have dominated inverter designs due to their reliability and well-established manufacturing ecosystem.

has excellent properties such as a wide bandgap, high carrier saturation drift rate, and strong chemical stability. These make it an ideal material for high-temperature pressure sensors.

It's a win-win, and it's why everything on iStock is only available royalty-free — including all Arrow Symbol images and footage. What kinds of royalty-free files are available on iStock? How can you ...

Abstract: This study presents the design of a graphene-doped silicon sensor that incorporates a two-dimensional photonic crystal nanocavity resonator integrated into a waveguide. The selection of ...