Many displays found in smartphones and televisions rely on thin-film transistors (TFTs) made from indium gallium zinc oxide ...

Developed by a research team in Australia, the sensor can also detect temperature changes in a sample using the boron vacancy defect present in hBN. And thanks to its atomically thin structure, the ...

Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies, as well as veiled dielectric-responsive character, are instrumental in electromagnetic dissipation.

Tin-vacancy defects are classified as Group-IV color centers, which are a type of diamond defect caused by atoms such as silicon, germanium, or tin.

The tin-vacancy defects belong to a family known as Group-IV color centers—a class of defects in diamond created by atoms such as silicon, germanium, or tin.

Researchers reveal defect properties in Sb2S3 material. University of Science and Technology of China. Journal Nature Communications DOI 10.1038/s41467-021-23592-0 ...

Introducing oxygen vacancy defect engineering into the catalyst thus opens up a new avenue for enhancing the cyclic stability and kinetic performance of MgH 2. More information: ...

The key to the team’s new approach is to create the nitrogen and vacancy defects separately, Awschalom said. First, the team grew a layer of nitrogen-doped crystal within a diamond film. The ...

Quantum electronics: 'Bite' defects in bottom-up graphene nanoribbons Date: May 25, 2021 Source: Swiss Federal Laboratories for Materials Science and Technology (EMPA) ...

Insights into atomic-scale defects may enable next-generation thin-film transistors for smartphones, televisions, and ...