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To address the persistent challenge of thermal stress, the leading cause of SiC MOSFET failure, it is essential to enhance their field robustness and extend their lifespan through precise junction ...
This work presents a sub-100 nW all-in-one voltage and current reference circuit implemented using 600 nm indium gallium zinc oxide (IGZO) thin-film transistor (TFT) on a flexible substrate. The ...
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