NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

These metrics did not degrade after the DRAM-specific anneal. Flavors with taller fins (with up to 80-nm height) have also been developed, with improved threshold voltage mismatch and area gain.

3D X-DRAM technology will bring bigger, faster memory by 2026, but there's no way these 512GB modules will sell to consumers News By Efosa Udinmwen published 21 May 2025 ...

Because it integrates higher-density DRAM die, Micron’s HBM3 Gen 2 can be 50 percent bigger (higher capacity) than existing HBM3 DRAM available from other memory vendors, with 2.5x better ...

An analysis of the DRAM and flash market confirms prices in both commodities are rising sharply and could continue to do so for the remainder of 2024. This means that prices of memory modules and ...

Memory Chip AI-Related Innovation From Intel, SoftBank Joint Venture Could Reshape Market Your email has been sent Intel and Japanese multinational investment holding company SoftBank Group have ...

Micron Technology has launched its 1-beta DRAM to improve power efficiency by 15% and bit density by 35% for memory chips.. This means that the Boise, Idaho-based memory chip maker is still one of ...

Persistent memory, as its name suggests, can retain content even without power, making it a huge asset in certain applications. However, the experts believe that despite its obvious benefits ...