News
This paper describes development and characterization of a novel technology for selective and direct gold electroplating on silicon surface. In the MEMS field, the gold electroplating is increasingly ...
10×100-micron TSV was prepared by deep reactive ion etching process. Barrier and seed layer were deposited by physical vapor deposition process and prior to Cu electroplating, Ni was electroplated on ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results