Abstract: A comparative study of the simulated breakdown voltage of 4H-SiC devices has been conducted for the most widely used impact ionization models (Selberherr, Hatakeyama), based on the ...
Abstract: Wide bandgap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), have bandgap energies larger than 3 eV with high breakdown electric fields, showing the advantage on ...
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