Abstract: The temperature-dependent reverse recovery characteristics of the SiC MOSFET body diode are comprehensively investigated in this paper. Initially, the switching transient of the SiC MOSFET ...

SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. The new GCMS versions incorporate Schottky barrier diodes ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

A diode is a device that allows electric current to flow in only one direction, from its anode towards its cathode but not the other way around. There is plenty of online material explaining diode ...

Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster ...

As SiC MOSFETs become increasingly popular due to their faster switching speeds and superior efficiency compared to traditional Silicon MOSFETs and IGBTs, the need for robust gate protection has never ...

Abstract: The paper extends the investigation of the body diode (BD) turn-off process for 1.2 kV SiC MOSFETs [1]. Here, we investigate the devices under high current density (J=675 A/cm 2), fast ...

Today, SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China. The new facility realized volume ...

NANJING, China--(BUSINESS WIRE)--Today, SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China.