has excellent properties such as a wide bandgap, high carrier saturation drift rate, and strong chemical stability. These make it an ideal material for high-temperature pressure sensors.

Researchers have demonstrated that by using a semiconductor with flexible bonds, the material can be molded into various structures using nano containers, without altering its composition. The ...

Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family. The new ...

The review, titled “Pressure Sensors Based on the Third-generation Semiconductor Silicon ... wide bandgap, high carrier saturation drift velocity, and excellent chemical stability. These ...

Traditionally, silicon-based power devices such as Insulated Gate Bipolar Transistors (IGBTs) have dominated inverter designs due to their reliability and well-established manufacturing ecosystem.

Abstract: This paper proposes a topology of amplifier-less temperature sensor based on BJT. Two base-emitter voltages are connected to the input and the reference voltage of the ADC. The signal ratio ...