Vertical power devices with thick GaN layers on sapphire
Dec 6, 2024 · µ Dominating the headlines of our industry are the vast sums spent on building new SiC fabs and expanding the capacity in existing facilities. In general, such efforts are directed at increasing production of 1.2 kV MOSFETs, a key component in electric vehicles that is helping to maximise their range.
Realising high-performance sensors with heterogeneous integration
Dec 5, 2024 · In quite a number of applications there is much demand for scalable, low-cost, high-performance sensors. Such sensors are wanted for autonomous systems, robotics, defence and aerospace technologies, artificial intelligence (AI), mobile phones, smart watches, and augmented reality/virtual reality (AR/VR).
DARPA awards $3M for heterogenous integration research
Oct 31, 2024 · The University of Michigan has won $3M funding to develop CMOS-compatible, defect-free universal growth of III-N and III-V multilayer heterostructures on silicon.
MicroLED chip revenue to reach $489.5m by 2028 - News
Dec 3, 2024 · TrendForce reports that the revenue from microLED chips is projected to reach approximately $38.8 million in 2024, with large displays remaining the primary source of contribution.
Clas-SiC expands technology in its stride - News
Founded in 2017, Clas-SiC Wafer Fab is the world’s first open foundry dedicated to SiC. At our facility, located in Lochgelly on the outskirts of Scotland’s capital city, Edinburgh, we have adopted a pure-play approach, which means that we’ll never be in competition with our device customers.
Advancing GaN power devices with ammonia MBE
Dec 5, 2024 · THE LAST FEW YEARS have seen a surge in demand for efficient power devices. It’s a ramp that’s been spurred on by the rise of a number of next-generation technologies, including fast chargers, data centres, smart grids, high-speed telecommunication, and …
Nexperia: Expanding GaN and SiC operations - News
Sep 16, 2024 · Investing phenomenal sums in infrastructure that enables the production of SiC and GaN devices is the new norm. In this regard the likes of Infineon, Wolfspeed and Innoscience are making the biggest splashes, by building fabs of breath-taking proportions that are propelling their capacity for high-volume production of wide bandgap power devices.
Aixtron opens innovation centre - News
Dec 16, 2024 · Mona Neubaur, Minister for Economic Affairs of the State of North Rhine-Westphalia, Germany, has opened Aixtron's new Innovation Centre at the company's headquarters in Herzogenrath. The high-tech building is designed for the next big step in compound semiconductor technology: the transition to 300 ...
Smartkem signs agreement with FlexiIC - News
Dec 5, 2024 · Smartkem, a UK maker of organic thin-film transistors (OTFTs), has signed a multi-year agreement with FlexiIC, a Spanish company designing flexible integrated circuits and systems.
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